Dr. Giorgio Casinovi – Publications

Passive TCF Compensation in High Q Silicon
Micromechanical Resonators

A.K. Samarao, G. Casinovi and F. Ayazi

IEEE International Conference on Micro Electro Mechanical Systems
pp. 116–119, January 2010

Abstract
This paper reports on passive temperature
compensation techniques for high quality factor (Q)
silicon microresonators based on engineering the
geometry of the resonator and its material properties. A
105 MHz concave silicon bulk acoustic resonator (CBAR)
fabricated on a boron-doped substrate with a resistivity of
10^-3 Ω-cm manifests a linear temperature coefficient of
frequency (TCF) of -6.3 ppm/°C while exhibiting a Q of
101,550 (fQ = 1.06×10¹³). The TCF is further reduced by
engineering the material property via a wafer-level
aluminum thermomigration process to -3.6 ppm/°C while
maintaining an fQ of over 4×10¹². Such high fQ products
with low TCF values are being reported for the first time
in silicon and are critical for successful insertion of these
devices into low-power low-phase noise frequency
references and high performance resonant sensors.

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Last revised on January 14, 2014.