Dr. Giorgio Casinovi – Publications
Temperature-Stable High-Q AlN-on-Silicon Resonators with
Embedded Array of Oxide Pillars
R. Tabrizian, G. Casinovi and F. Ayazi
Solid-State Sensors, Actuators and Microsystems Workshop
pp. 100–101, June 2010
Abstract
This paper reports on a new temperature compensation technique for
high-Q AlN-on-Silicon bulk acoustic wave resonators. A uniform array
of silicon dioxide (SiO2) pillars are formed in the silicon body
of the resonator to generate a composite resonator with a near-zero
temperature coefficient of frequency (TCF). At a resonance frequency
of 24MHz, a total frequency drift of 90 ppm over the temperature
range of -20 °C to 100 °C was measured while Q exceeded
10,000 at all temperatures. This compensation technique is applicable
to bulk acoustic resonators with thick silicon substrate that
demonstrate high Q as well as good power handling and
linearity.
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Last revised on January 14, 2014.