Dr. Giorgio Casinovi – Publications
Temperature-Stable Silicon Oxide (SilOx) Micromechanical Resonators
R. Tabrizian, G. Casinovi and F. Ayazi
IEEE Transactions on Electron Devices
vol. 60, no. 8, pp. 2656–2663, August 2013
Abstract
This paper presents a passive temperature compensation
technique that can provide full cancellation of the linear
temperature coefficient of frequency (TCF1) in
silicon resonators. A uniformly distributed matrix of
silicon dioxide pillars is embedded inside the silicon
substrate to form a homogenous composite silicon oxide
platform (SilOx) with nearly perfect temperature-compensated
stiffness moduli. This composite platform enables the
implementation of temperature-stable microresonators
operating in any desired in- and out-of-plane resonance
modes. Full compensation of TCF1 is achieved for
extensional and shear modes of SilOx resonators resulting in
a quadratic temperature characteristic with an overall
frequency drift as low as 83 ppm over the industrial
temperature range (−40 °C to 80 °C).
Besides a 40 times reduction in temperature-induced frequency
drift in this range, SilOx resonators exhibit improved
temperature stability of Q compared with their
single crystal silicon counterparts.
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Last revised on January 14, 2014.