Dr. Giorgio Casinovi – Publications
Analytical Modeling and Numerical Simulation of Capacitive Silicon
Bulk Acoustic Resonators
G. Casinovi, X. Gao and F. Ayazi
IEEE International Conference on Micro Electro Mechanical Systems
pp. 935–938, January 2009
Abstract
This paper introduces two newly developed models of capacitive
silicon bulk acoustic resonators (SiBARs). The first model is
analytical and is obtained from an approximate solution of the
linear elastodynamics equations for the SiBAR geometry. The
second is numerical and is based on finite-element, multi-physics
simulation of both acoustic wave propagation in the resonator
and electromechanical transduction in the capacitive gaps of
the device. This latter model makes it possible to compute SiBAR
performance parameters that cannot be obtained from the analytical
model, e.g. the relationship between transduction area and insertion
loss. Comparisons with measurements taken on a set of silicon
resonators fabricated using electron-beam lithography show that
both models can predict the resonant frequencies of SiBARs with
a relative error smaller than 1%.
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Last revised on January 14, 2014.